Electronic structure of advanced materials studied by X-ray emission spectroscopy

E. Z. Kurmaev, V. R. Galakhov, Yu M. Yarmoshenko, V. A. Trofimova, S. N. Shamin, V. M. Cherkashenko, A. I. Poteryaev, V. I. Anisimov

Research output: Contribution to journalArticlepeer-review

Abstract

High resolution soft X-ray emission spectroscopy with high spatial resolution is used to study the electronic structure and to characterize advanced materials: high-Tc superconductors, transition metal compounds, porous silicon, solid-solid buried interfaces and hard materials. In high-Tc, the main attention is focused on the analysis of oxygen-cation interactions and the determination of the location of impurity atoms. In transition metal compounds the participation of different electronic states of constituent atoms in the valence band is analyzed and correctness of LDA band structure calculations is estimated. For CuFeO2 unusual mutual position of the Cu3d and Fe3d bands was found which is attributed to strong electron-electron correlations. In porous silicon the local structure of silicon atoms was found to depend on the type of doping of the initial Si wafer. Solid-solid buried interfaces in thin semiconducting films irradiated by excimer laser were investigated. For the hard materials boron-carbonitride a structure consisting of hexagonal lattice planes of carbon and boron nitride is proposed.

Original languageEnglish
Pages (from-to)637-649
Number of pages13
JournalSurface Investigation X-Ray, Synchrotron and Neutron Techniques
Volume13
Issue number4-5
Publication statusPublished - 1998
Externally publishedYes

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