The electronic properties of Si δ-doped GaAs heterostructures are investigated by both theoretical and experimental methods. Photoluminescence, photoluminescence excitation, and magnetotransport measurements are performed to study periodically spaced multiple Si δ-doped GaAs layers (Mδ-doped) and Si δ-doping in GaAs/AlGaAs quantum-wells (δ-doped QWs). Both, the electronic structure and the optical transitions involving the quantum confined states are probed. Self-consistent one-electron state calculations, in the effective mass approximation, are carried out to determine potential profiles, electronic subband energies and occupancies, charge densities and miniband dispertions. Clear manifestations of enhancement of carriers confinement are seen, and analyses as a function of the doping period in the Mδ-doped structures and as a function of dopant concentration in the δ-doped QWs.
|Number of pages||6|
|Journal||Materials Science Forum|
|Issue number||pt 1|
|Publication status||Published - 1994|
|Event||Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria|
Duration: 18 Jul 1993 → 23 Jul 1993