Electronic states of n-type δ-doping in GaAs heterostructures

L. M.R. Scolfaro, J. R. Leite, C. A.C. Mendonca, D. Beliaev, S. M. Shibli, E. C.F.da Silva, E. A. Meneses

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


The electronic properties of Si δ-doped GaAs heterostructures are investigated by both theoretical and experimental methods. Photoluminescence, photoluminescence excitation, and magnetotransport measurements are performed to study periodically spaced multiple Si δ-doped GaAs layers (Mδ-doped) and Si δ-doping in GaAs/AlGaAs quantum-wells (δ-doped QWs). Both, the electronic structure and the optical transitions involving the quantum confined states are probed. Self-consistent one-electron state calculations, in the effective mass approximation, are carried out to determine potential profiles, electronic subband energies and occupancies, charge densities and miniband dispertions. Clear manifestations of enhancement of carriers confinement are seen, and analyses as a function of the doping period in the Mδ-doped structures and as a function of dopant concentration in the δ-doped QWs.

Original languageEnglish
Pages (from-to)669-674
Number of pages6
JournalMaterials Science Forum
Issue numberpt 1
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: 18 Jul 199323 Jul 1993


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