Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings - Quantum well system

Y. D. Sibirmovsky, I. S. Vasil'Evskii, A. N. Vinichenko, D. M. Zhigunov, I. S. Eremin, O. S. Kolentsova, D. A. Safonov, N. I. Kargin

Research output: Contribution to journalConference articlepeer-review

Abstract

Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

Original languageEnglish
Article number032041
JournalJournal of Physics: Conference Series
Volume917
Issue number3
DOIs
Publication statusPublished - 23 Nov 2017
Externally publishedYes
Event4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation
Duration: 3 Apr 20176 Apr 2017

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