Electro-optically controlled beam switching via total internal reflection at a domain-engineered interface in LiNbO3

Alexander J. Boyland, Sakellaris Mailis, Jason M. Hendricks, Peter G.R. Smith, Robert W. Eason

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We report a novel switching method that occurs due to the electro-optic effect under applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO3 subtends an angle greater than that required for total internal reflection (TIR). We present data obtained for wavelengths of 0.543 and 1.52 μm and compare this with a theoretical model. This switch has many attractive properties, as TIR is a 100% efficient process leading to the possibility of high contrast ratios; current data shows contrast ratios greater than 100:1 (20 dB). Other properties include relatively simple fabrication procedure, low drive voltages and a wavelength dependence that is less than other electro-optic devices such as Pockels cells.

Original languageEnglish
Pages (from-to)193-200
Number of pages8
JournalOptics Communications
Volume197
Issue number1-3
DOIs
Publication statusPublished - 15 Sep 2001
Externally publishedYes

Keywords

  • Domain engineering
  • Electro-optic effect
  • Grazing incidence
  • Lithium niobate
  • Switching
  • Total internal reflection

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