Electrical and optical characterisation of silicon nanocrystals embedded in SiC

M. Schnabel, P. Löper, M. Canino, S. A. Dyakov, M. Allegrezza, M. Bellettato, J. López-Vidrier, S. Hernández, C. Summonte, B. Garrido, P. R. Wilshaw, S. Janz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Citations (Scopus)

Abstract

Silicon nanocrystals (Si NCs) are a promising candidate for the top cell of an all-Si tandem solar cell with a band gap from 1.3-1.7 eV, tuneable by adjusting NC size. They are readily produced within a Si-based dielectric matrix by precipitation from the Si excess in multilayers of alternating stoichiometric and silicon-rich layers. Here we examined the luminescence and transport of Si NCs embedded in SiC. We observed luminescence that redshifts from 2.0 to 1.5 eV with increasing nominal NC size. Upon further investigation, we found that this redshift is to a large extent due to Fabry-Pérot interference. Correction for this effect allows an analysis of the spectrum emitted from within the sample. We also produced p-i-n solar cells and found that the observed I-V curves under illumination could be well-fitted by typical thin-film solar cell models including finite series and parallel resistances, and a voltage-dependent current collection function. A minority carrier mobility-lifetime product on the order of 10-10 cm2/V was deduced, and a maximum open-circuit voltage of 370 mV achieved.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages480-485
Number of pages6
ISBN (Print)9783037858240
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: 22 Sep 201327 Sep 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Conference

Conference15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Country/TerritoryUnited Kingdom
CityOxford
Period22/09/1327/09/13

Keywords

  • P-i-n junction
  • Photoluminescence
  • Recombination
  • Silicon carbide
  • Silicon nanocrystals
  • Solar cell

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