Effect of high-frequency pumping on thin-film topological insulators

A. A. Pervishko, D. Yudin, I. A. Shelykh

Research output: Contribution to journalConference articlepeer-review

Abstract

Thin-film topological insulators (TIs) with the thickness below 10 nm are characterized by the presence of a gap in the spectrum of topologically protected surface states. This unusual behavior, also known as anomalous finite size effects, is associated with the hybridization between the states propagating along the opposite boundaries of thin-slab TI. In this work we consider a bismuth-based TI and show how an intense high-frequency linearly polarized light can be used for the tuning of the value of a gap. We also theoretically predict the effect of band inversion in the spectrum of the surface states under external electromagnetic pumping.

Original languageEnglish
Article number012114
JournalJournal of Physics: Conference Series
Volume1092
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event3rd International Conference on Metamaterials and Nanophotonics, METANANO 2018 - Sochi, Russian Federation
Duration: 17 Sep 201821 Sep 2018

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