Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev, S. Komiyama, T. Kutsuwa

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A single-electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/Alcursive chiGa1-cursive chiAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter waves (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot, yielding the photoresponse. The noise equivalent power of the detector for wavelengths of about 0.6 mm is estimated to reach the order of 10-17W/√Hz at 70 mK.

Original languageEnglish
Pages (from-to)1199-1201
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number8
DOIs
Publication statusPublished - 20 Aug 2001
Externally publishedYes

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