Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy

H. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, Ph Ebert

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10 Citations (Scopus)

Abstract

We investigated the imaging mechanisms of a Si doping modulation in GaN by cross-sectional scanning tunneling microscopy (STM). The Si doping modulation gives rise to a voltage and tip dependent height modulation of at least 0.4 Å. The origin of the height modulation in constant-current STM images is traced to two mechanisms. A doping-induced modu-lation of the band edge energies yields a voltage dependent electronic contrast and an additional mechanical relaxation of the doping-induced strain at the cleavage surface is respon-sible for a voltage independent modulation of 0.35 Å.

Original languageEnglish
Article number162110
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
Publication statusPublished - 2009
Externally publishedYes

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