DLTS studies of low‐t emperature annealing in lithium‐d oped silicon

N. V. Brilliantov, A. I. Rudenko, Yu V. Shcherbakov, V. V. Zverev

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

DLTS studies of annealing kinetics are carried out for 1 MeV electron irradiated lithium‐d oped silicon p‐n solar cells. The results obtained show that during low‐t emperature annealing Li atoms actively interact with radiation defects, transforming them into complexes with low recombination properties. New deep levels (Ec−0.36 eV) and (Ev0.30 eV), associated with lithium‐c ontaining complexes are observed. A multistage annealing model for annealing of radiation defects is proposed. An explanation of the annealing kinetics as well as the identification of the new deep levels is given on the base of the model.

Original languageEnglish
Pages (from-to)53-60
Number of pages8
JournalPhysica Status Solidi (A) Applied Research
Volume130
Issue number1
DOIs
Publication statusPublished - 16 Mar 1992
Externally publishedYes

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