Single-photon detection in a range of submillimeter waves (λ = 0.17-0.20 mm) is demonstrated by using lateral semiconductor quantum dots fabricated on a high-mobility GaAs/AlGaAs single heterostructure crystal. When a submillimeter photon is absorbed by the quantum dot while it is operated as a single-electron transistor, it switches on (or off) the conductance through the quantum dot. An incident flux of 0.1 photons/s on an effective detector area, (0.1 mm)2, is detected with a 1 ms time resolution. The effective noise equivalent power is roughly estimated to reach on the order of 10-22 W/Hz1/2, a value superior to the ever reported best values of conventional detectors by a factor more than 104.
|Number of pages||8|
|Journal||Acta Physica Polonica A|
|Publication status||Published - Sep 2000|
|Event||Proceedings of the XXIX International School on Physics of Semiconducting Compounds - Jaszowiec, Poland|
Duration: 2 Jun 2000 → 9 Jun 2000