Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer

Alisa A. Rezvanova, Lyubov A. Frolova, Pavel A. Troshin

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2H-indole-2,3'-[3H]naphth[2,1-b][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed. The memory elements exhibit a switching coefficient of ∼104 and a minimal programming time of 0.5-1.5 ms.

Original languageEnglish
Pages (from-to)26-28
Number of pages3
JournalMendeleev Communications
Volume26
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016
Externally publishedYes

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