We report the synthesis and systematic investigation of nine different indigo derivatives as promising materials for sustainable organic electronics. It has been shown that chemical design allows one to tune optoelectronic properties of indigoids as well as their semiconductor performance in OFETs. Fundamental correlations between the molecular structures of indigo derivatives, structural characteristics of their films, charge carrier transport properties and transistor characteristics have been revealed. Particularly important was lowering the LUMO energy levels of indigoids bearing strong electron withdrawing groups which improved dramatically ambient stability of n-type OFETs. Chemical structures of novel indigoids enabling truly air-stable n-channel OFET operation were proposed.