Critical terrace width for two-dimensional nucleation during Si growth on Si(111)-(7×7) surface

D. I. Rogilo, L. I. Fedina, S. S. Kosolobov, B. S. Ranguelov, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The critical terrace width λ for 2D island nucleation and growth (2DNG) on large-scale atomically flat terraces of a step-bunched Si(111)-(7×7) surface has been studied by in situ ultrahigh vacuum reflection electron microscopy as a function of the substrate temperature T and Si deposition rate R. The dependence of λ2(R) is characterized by a power law with scaling exponent χ=1.36-1.46, validating an attachment limited (AL) growth kinetics up to 720 C. At this temperature, the Arrhenius dependencies l/2(1/T) change their slope, so that the effective 2DNG activation energy E2D drops from 2.4 eV down to 0.5 eV at T>720 C. We first show that the E2D change is caused by a transition between AL and DL (diffusion limited) growth kinetics accompanied by a step shape transformation. The AL growth mode is characterized by kinetic length d-∼105a and the preferential step-down attachment of atoms to steps limited by an energy barrier EES-≈0.9 eV.

Original languageEnglish
Article number036105
JournalPhysical Review Letters
Volume111
Issue number3
DOIs
Publication statusPublished - 19 Jul 2013
Externally publishedYes

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