Controllable modification of SiC nanowires encapsulated in BN nanotubes

Yubao Li, Pavel S. Dorozhkin, Yoshio Bando, Dmitri Golberg

Research output: Contribution to journalArticlepeer-review

111 Citations (Scopus)

Abstract

A simple vapor-solid route for the synthesis of BN-SiC nanocables having open tip-ends and unmatched features was discussed. These features allow to selectively perform intratube operations and to independently modify the geometry and chemistry of the semiconducting SiC cores. Electrical-transport measurements performed on individual nanostructures indeed confirmed the perfect insulating nature of the BN nanotube sheaths. BN nanotube sheaths were confirmed to exhibit excellent electrical insulation of the encapsulated semiconducting nanowires.

Original languageEnglish
Pages (from-to)545-549
Number of pages5
JournalAdvanced Materials
Volume17
Issue number5
DOIs
Publication statusPublished - 8 Mar 2005
Externally publishedYes

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