Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor

Christian Tantardini, Alexander G. Kvashnin, Carlo Gatti, Boris I. Yakobson, Xavier Gonze

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

To study the possibility for silicene to be employed as a field-effect transistor (FET) pressure sensor, we explore the chemistry of monolayer and multilayered silicene focusing on the change in hybridization under pressure. Ab initio computations show that the effect of pressure depends greatly on the thickness of the silicene film, but also reveals the influence of real experimental conditions, where the pressure is not hydrostatic. For this purpose, we introduce anisotropic strain states. With pure uniaxial stress applied to silicene layers, a path for sp3 silicon to sp3d silicon is found, unlike with pure hydrostatic pressure. Even with mixed-mode stress (in-plane pressure half of the out-of-plane one), we find no such path. In addition to introducing our theoretical approach to study 2D materials, we show how the hybridization change of silicene under pressure makes it a good FET pressure sensor.

Original languageEnglish
Pages (from-to)6861-6871
Number of pages11
JournalACS Nano
Volume15
Issue number4
DOIs
Publication statusPublished - 27 Apr 2021

Keywords

  • 2D structures
  • Abinit
  • field-effect transistor
  • honeycomb
  • pressure sensors
  • silicene

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