Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Hyunsik Im, Yu A. Pashkin, T. Yamamoto, O. Astafiev, Y. Nakamura, J. S. Tsai

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

Original languageEnglish
Article number112113
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006
Externally publishedYes

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