Cathodoluminescence and current DLTS of MOVPE-grown ZnCdS/ZnSSe SQW structures

V. I. Kozlovsky, D. A. Sannikov, V. G. Litvinov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

ZnCdS/ZnSSe SQW structures grown by using metal-organic vapor-phase epitaxy (MOVPE) were investigated. Based on current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) data, we estimated the conduction band offset on the ZnCdS/ZnSSe interface.

Original languageEnglish
Pages (from-to)2864-2866
Number of pages3
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 2
DOIs
Publication statusPublished - Nov 2008
Externally publishedYes

Keywords

  • Band offset
  • Quantum well
  • ZnCdS/ZnSSe II-type heterostructure

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