Can cation vacancy defects induce room temperature ferromagnetism in GaN?

Xiaopeng Wang, Mingwen Zhao, Tao He, Zhenhai Wang, Xiangdong Liu

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


The unique properties of gallium nitride (GaN) crystal, such as a wide band-gap and high thermal conductivity, make it ideal material for electronic and optoelectronic devices. Achieving room temperature (RT) ferromagnetism in GaN becomes crucial. In previous works, gallium vacancy (VGa) was expected to be promising for reaching this goal. However, using an accurate hybrid exchange-correlation functional, we show that the largest value of J 0 is only 3.3 meV at the VGa density of 1.28 × 1021 cm-3, corresponding to a Curie temperature of 150 K. This suggests that VGa cannot induce RT ferromagnetism at the density lower than that value.

Original languageEnglish
Article number062411
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 11 Feb 2013
Externally publishedYes


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