Atomic force microscopy of silicon stepped surface

S. S. Kosolobov, D. A. Nasimov, D. V. Sheglov, E. E. Rodyakina, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Atomic force microscopy has been applied to investigate morphology of a stepped silicon surface after sublimation, thermal oxygen etching, and oxidation. Silicon surface was treated under the conditions of step bunching to fabricate large step-free areas. Consecutive stages of structural transformations induced by the interaction of oxygen molecules with the silicon surface were visualized. Peculiarities of adatoms and vacancies behavior on the large step-free area were analyzed.

Original languageEnglish
Pages (from-to)231-238
Number of pages8
JournalPhysics of Low-Dimensional Structures
Volume5-6
Publication statusPublished - 2002
Externally publishedYes

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