Atomic force microscopy has been applied to investigate morphology of a stepped silicon surface after sublimation, thermal oxygen etching, and oxidation. Silicon surface was treated under the conditions of step bunching to fabricate large step-free areas. Consecutive stages of structural transformations induced by the interaction of oxygen molecules with the silicon surface were visualized. Peculiarities of adatoms and vacancies behavior on the large step-free area were analyzed.
|Number of pages||8|
|Journal||Physics of Low-Dimensional Structures|
|Publication status||Published - 2002|