Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates

V. P. Kalinushkin, D. I. Murin, V. A. Yuryev, O. V. Astafiev, A. I. Buvaltsev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

The method for investigation and control of large-scale recombination-active defects in near- surface regions of semiconductor wafers is proposed. The potentialities of the technique proposed are illustrated by the example of germanium single crystals.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsV.I. Pustovoy, Miroslav Jelinek
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages146-153
Number of pages8
ISBN (Print)0819416657
Publication statusPublished - 1994
Externally publishedYes
EventSecond International Symposium on Advanced Laser Technologies - Prague, Czech Republic
Duration: 8 Nov 199313 Nov 1993

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2332
ISSN (Print)0277-786X

Conference

ConferenceSecond International Symposium on Advanced Laser Technologies
CityPrague, Czech Republic
Period8/11/9313/11/93

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