Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon

V. P. Kalinushkin, A. N. Buzynin, D. I. Murin, V. A. Yuryev, O. V. Astaf'ev

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1 Citation (Scopus)

Abstract

The influence of the internal gettering process on the large-scale defects in Czochralski-grown boron-doped single-crystal silicon is investigated by low-angle mid-infrared light scattering. The large-scale defects in the as-grown material and crystals subjected to the internal gettering procedure are classified. The applicability of low-angle light scattering in laboratory investigations and in the industrial inspection of the operations in an internal gettering production cycle is demonstrated.

Original languageEnglish
Pages (from-to)994-998
Number of pages5
JournalSemiconductors
Volume31
Issue number10
DOIs
Publication statusPublished - Oct 1997
Externally publishedYes

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