Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors

Daniel Astigarraga, Federico Martin Ibanez, Ainhoa Galarza, Jose Martín Echeverria, Inigo Unanue, Piero Baraldi, Enrico Zio

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

Abstract

The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as IGBT. The great variability in IGBT failure times caused by the very different operating conditions experienced and the stochasticity of their degradation processes suggests the adoption of condition-based maintenance approaches. Thus, the development of methods for assessing their healthy state and predicting their remaining useful life (RUL) is of key importance. In this paper, we investigate the results of performing accelerated aging tests. Our objective is to discuss the design and the results of accelerated aging tests performed on three different IGBT types within the electrical powertrain health monitoring for increased safety (HEMIS) of FEVs European Community project. During the tests, several electric signals were measured in different operating conditions. The results show that the case temperature (TC), the collector current (IC), and the collector-emitter voltage (VCE) are the failure precursor parameters that can be used for the development of a prognostic and health monitoring (PHM) system for FEV IGBTs and other medium-power switching supplies.

Original languageEnglish
Article number7368210
Pages (from-to)7953-7962
Number of pages10
JournalIEEE Transactions on Power Electronics
Volume31
Issue number11
DOIs
Publication statusPublished - Nov 2016
Externally publishedYes

Keywords

  • Accelerated Aging Tests
  • FEV
  • IGBT
  • PHM

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