An influence of polyelectrolyte layer on electrophysical properties of MIS structures

Dmitry A. Gorin, Alexey M. Yaschenok, Alexey O. Manturov, Boris N. Klimov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.

Original languageEnglish
Title of host publication2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009
Pages50-52
Number of pages3
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, INTERNANO-2009 - Novosibirsk, Russian Federation
Duration: 28 Oct 200931 Oct 2009

Publication series

Name2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies - Proceedings, INTERNANO-2009

Conference

Conference2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, INTERNANO-2009
Country/TerritoryRussian Federation
CityNovosibirsk
Period28/10/0931/10/09

Keywords

  • MIS structure
  • Polyelectrolyte layers
  • Resistance
  • Silicon
  • Surface

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