Ammonia gas sensors using 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile semiconductor films

Aleksei A. Parfenov, Alexander V. Mumyatov, Diana K. Sagdullina, Alexander F. Shestakov, Pavel A. Troshin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile HAT(CN)6 represents a promising semiconductor material for organic electronic applications ranging from field-effect transistors to magnetic switches and solar cells. Herein, we report for the first time the application of HAT(CN)6 for designing OFET-based gas sensors. The organic field-effect transistors based on HAT(CN)6 showed a decent charge carrier mobility of 10−4 cm2 V−1s−1 coupled with high sensitivity and fast response to low concentrations of ammonia. Quantum chemical DFT calculations were applied to investigate supramolecular interactions of HAT(CN)6 with ammonia and reveal the origin of the observed sensing effect.

Original languageEnglish
Article number116764
JournalSynthetic Metals
Volume277
DOIs
Publication statusPublished - Jul 2021
Externally publishedYes

Keywords

  • Gas sensor
  • OFET
  • Organic field-effect transistor
  • Organic semiconductors

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