A new optical technique for characterization of technological semiconductor wafers

O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A new non-destructive method for visualization of free carrier accumulations in standard semiconductor wafers is being proposed. This method has been developed on the basis of the conventional low-angle mid-IR-light-scattering technique and dark field microscopy. Being sensitive to low concentrations of free carriers in the accumulations, the method allows mapping and investigation of technological semiconductor wafers for determination of the distribution of free carrier accumulations. The method has been applied to visualization of large-scale electrically active defect accumulations in a number of semiconductor crystals. The method may be applied for both scientific research and wafer incoming and step inspection directly in a technological cycle. The perspectives for further development of the technique proposed are also discussed in the paper.

Original languageEnglish
Pages (from-to)124-131
Number of pages8
JournalMaterials Science and Engineering B
Volume34
Issue number2-3
DOIs
Publication statusPublished - Nov 1995
Externally publishedYes

Keywords

  • Gallium arsenide
  • Indium phosphide
  • Rayleigh scattering
  • Semiconductors
  • Silicon

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