A new approach to achieve Gunn effect for GaN based THz sources with high power

Ahid S. Hajo, Oktay Yilmazoglu, Boraq Samodi, Armin Dadgar, Franko Kuppers, Thomas Kussorow

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

For the first time, Gunn effect is shown using a side-contact (SC) technology. Our THz Gunn source is based on 2 mu m thick gallium nitride (GaN) with stable operation up to 22 V due to better heat sink and side contact technology. A diode current of about 1 A was achieved for high output power.

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherIEEE Computer Society
ISBN (Electronic)9781538682852
DOIs
Publication statusPublished - Sep 2019
Externally publishedYes
Event44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
Duration: 1 Sep 20196 Sep 2019

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2019-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country/TerritoryFrance
CityParis
Period1/09/196/09/19

Fingerprint

Dive into the research topics of 'A new approach to achieve Gunn effect for GaN based THz sources with high power'. Together they form a unique fingerprint.

Cite this