A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction

Sergey V. Ovsyannikov, Alexander E. Karkin, Natalia V. Morozova, Vladimir V. Shchennikov, Elena Bykova, Artem M. Abakumov, Alexander A. Tsirlin, Konstantin V. Glazyrin, Leonid Dubrovinsky

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

(Graph Presented) An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

Original languageEnglish
Pages (from-to)8185-8191
Number of pages7
JournalAdvanced Materials
Volume26
Issue number48
DOIs
Publication statusPublished - 2014
Externally publishedYes

Keywords

  • Bandgap engineering
  • Direct-bandgap semiconductors
  • Electronic transport
  • Transition metal oxides

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